@article {106, title = {The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs}, journal = {IEEE Electron Device Letters}, volume = {40}, year = {2019}, month = {Jan-07-2019}, pages = {1060 - 1063}, issn = {0741-3106}, doi = {10.1109/LED.5510.1109/LED.2019.2915984}, author = {Pavlidis, Georges and Kim, Samuel H. and Abid, Idriss and Zegaoui, Malek and Medjdoub, Farid and Graham, Samuel} }