@article {111, title = {High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications}, journal = {Materials}, volume = {13}, year = {2020}, month = {Jan-10-2020}, pages = {4271}, doi = {10.3390/ma13194271}, author = {Tajalli, Alaleh and Meneghini, Matteo and Besend{\"o}rfer, Sven and Kabouche, Riad and Abid, Idriss and P{\"u}sche, Roland and Derluyn, Joff and Degroote, Stefan and Germain, Marianne and Meissner, Elke and Zanoni, Enrico and Medjdoub, Farid and Meneghesso, Gaudenzio} }