@conference {89,
	title = {Micro-seconds-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate},
	booktitle = {2019 IEEE International Reliability Physics Symposium (IRPS)2019 IEEE International Reliability Physics Symposium (IRPS)},
	year = {2019},
	publisher = {IEEE},
	organization = {IEEE},
	address = {Monterey, CA, USA},
	doi = {10.1109/IRPS.2019.8720549},
	url = {https://ieeexplore.ieee.org/document/8720549/http://xplorestaging.ieee.org/ielx7/8712125/8720395/08720549.pdf?arnumber=8720549},
	author = {Canato, E. and Masin, F. and Borga, M. and Zanoni, E. and Meneghini, M. and Meneghesso, G. and Stockman, A. and Banerjee, A. and Moens, P.}
}
