@conference {103,
	title = {Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure},
	booktitle = {2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)},
	year = {2020},
	publisher = {IEEE},
	organization = {IEEE},
	address = {Vienna, Austria},
	doi = {10.1109/ISPSD46842.202010.1109/ISPSD46842.2020.9170170},
	author = {Abid, I. and Kabouche, R. and Medjdoub, F. and Besend{\"o}rfer, S. and Meissner, E. and Derluyn, J. and Degroote, S. and Germain, M. and Miyake, H.}
}
@article {123,
	title = {Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment},
	journal = {Microelectronics Reliability},
	volume = {100-101},
	year = {2019},
	month = {Jan-09-2019},
	pages = {113461},
	issn = {00262714},
	doi = {10.1016/j.microrel.2019.113461},
	author = {Borga, M. and Meneghini, M. and Benazzi, D. and Canato, E. and P{\"u}sche, R. and Derluyn, J. and Abid, I. and Medjdoub, F. and Meneghesso, G. and Zanoni, E.}
}
