@article {106,
	title = {The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs},
	journal = {IEEE Electron Device Letters},
	volume = {40},
	year = {2019},
	month = {Jan-07-2019},
	pages = {1060 - 1063},
	issn = {0741-3106},
	doi = {10.1109/LED.5510.1109/LED.2019.2915984},
	author = {Pavlidis, Georges and Kim, Samuel H. and Abid, Idriss and Zegaoui, Malek and Medjdoub, Farid and Graham, Samuel}
}
