@article {109,
	title = {ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping},
	journal = {Microelectronics Reliability},
	volume = {100-101},
	year = {2019},
	month = {Jan-09-2019},
	pages = {113334},
	issn = {00262714},
	doi = {10.1016/j.microrel.2019.06.026},
	author = {Canato, E. and Meneghini, M. and Nardo, A. and Masin, F. and Barbato, A. and Barbato, M. and Stockman, A. and Banerjee, A. and Moens, P. and Zanoni, E. and Meneghesso, G.}
}
