@conference {113,
	title = {Degradation physics of GaN-based lateral and vertical devices},
	booktitle = {Gallium Nitride Materials and Devices XIVGallium Nitride Materials and Devices XIV},
	year = {2019},
	publisher = {SPIE},
	organization = {SPIE},
	address = {San Francisco, United States},
	doi = {10.1117/12.251114510.1117/12.2511145.6013192560001},
	author = {Meneghini, Matteo and De Santi, Carlo and Barbato, Alessandro and Borga, Matteo and Canato, Eleonora and Chiocchetta, Francesca and Fabris, Elena and Masin, Fabrizio and Nardo, Arianna and Rampazzo, Fabiana and Ruzzarin, Maria and Tajalli, Alaleh and Barbato, Marco and Meneghesso, Gaudenzio and Zanoni, Enrico},
	editor = {Morko{\c c}, Hadis and Fujioka, Hiroshi and Schwarz, Ulrich T.}
}
