@article {118,
	title = {Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures},
	journal = {AIP Advances},
	volume = {10},
	year = {2020},
	month = {Jan-04-2020},
	pages = {045028},
	doi = {10.1063/1.5141905},
	author = {Besend{\"o}rfer, S. and Meissner, E. and Zweipfennig, T. and Yacoub, H. and Fahle, D. and Behmenburg, H. and Kalisch, H. and Vescan, A. and Friedrich, J. and Erlbacher, T.}
}
