@article {119,
	title = {The 2018 GaN power electronics roadmap},
	journal = {Journal of Physics D: Applied Physics},
	volume = {51},
	year = {2018},
	month = {Jan-04-2020},
	pages = {163001},
	issn = {0022-3727},
	doi = {10.1088/1361-6463/aaaf9d},
	author = {Amano, H and Baines, Y and Beam, E and Borga, Matteo and Bouchet, T and Chalker, Paul R and Charles, M and Chen, Kevin J and Chowdhury, Nadim and Chu, Rongming and De Santi, Carlo and De Souza, Maria Merlyne and Decoutere, Stefaan and Di Cioccio, L and Eckardt, Bernd and Egawa, Takashi and Fay, P and Freedsman, Joseph J and Guido, L and H{\"a}berlen, Oliver and Haynes, Geoff and Heckel, Thomas and Hemakumara, Dilini and Houston, Peter and Hu, Jie and Hua, Mengyuan and Huang, Qingyun and Huang, Alex and Jiang, Sheng and Kawai, H and Kinzer, Dan and Kuball, Martin and Kumar, Ashwani and Lee, Kean Boon and Li, Xu and Marcon, Denis and M{\"a}rz, Martin and McCarthy, R and Meneghesso, Gaudenzio and Meneghini, Matteo and Morvan, E and Nakajima, A and Narayanan, E M S and Oliver, Stephen and Palacios, Tom{\'a}s and Piedra, Daniel and Plissonnier, M and Reddy, R and Sun, Min and Thayne, Iain and Torres, A and Trivellin, Nicola and Unni, V and Uren, Michael J and Van Hove, Marleen and Wallis, David J and Wang, J and Xie, J and Yagi, S and Yang, Shu and Youtsey, C and Yu, Ruiyang and Zanoni, Enrico and Zeltner, Stefan and Zhang, Yuhao}
}
