@article {123,
	title = {Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment},
	journal = {Microelectronics Reliability},
	volume = {100-101},
	year = {2019},
	month = {Jan-09-2019},
	pages = {113461},
	issn = {00262714},
	doi = {10.1016/j.microrel.2019.113461},
	author = {Borga, M. and Meneghini, M. and Benazzi, D. and Canato, E. and P{\"u}sche, R. and Derluyn, J. and Abid, I. and Medjdoub, F. and Meneghesso, G. and Zanoni, E.}
}
