@article {111,
	title = {High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications},
	journal = {Materials},
	volume = {13},
	year = {2020},
	month = {Jan-10-2020},
	pages = {4271},
	doi = {10.3390/ma13194271},
	author = {Tajalli, Alaleh and Meneghini, Matteo and Besend{\"o}rfer, Sven and Kabouche, Riad and Abid, Idriss and P{\"u}sche, Roland and Derluyn, Joff and Degroote, Stefan and Germain, Marianne and Meissner, Elke and Zanoni, Enrico and Medjdoub, Farid and Meneghesso, Gaudenzio}
}
@article {98,
	title = {Low On-Resistance and Low Trapping Effects in 1200 V Superlattice GaN-on-Silicon Heterostructures},
	journal = {physica status solidi (a)},
	volume = {217},
	year = {2020},
	month = {Jan-04-2020},
	pages = {1900687},
	issn = {1862-6300},
	doi = {10.1002/pssa.v217.710.1002/pssa.201900687},
	author = {Kabouche, Riad and Abid, Idriss and P{\"u}sche, Roland and Derluyn, Joff and Degroote, Stefan and Germain, Marianne and Tajalli, Alaleh and Meneghini, Matteo and Meneghesso, Gaudenzio and Medjdoub, Farid}
}
@article {116,
	title = {Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment},
	journal = {Micromachines},
	volume = {11},
	year = {2020},
	month = {Jan-01-2020},
	pages = {101},
	doi = {10.3390/mi11010101},
	author = {Tajalli, Alaleh and Borga, Matteo and Meneghini, Matteo and De Santi, Carlo and Benazzi, Davide and Besend{\"o}rfer, Sven and P{\"u}sche, Roland and Derluyn, Joff and Degroote, Stefan and Germain, Marianne and Kabouche, Riad and Abid, Idriss and Meissner, Elke and Zanoni, Enrico and Medjdoub, Farid and Meneghesso, Gaudenzio}
}
@conference {113,
	title = {Degradation physics of GaN-based lateral and vertical devices},
	booktitle = {Gallium Nitride Materials and Devices XIVGallium Nitride Materials and Devices XIV},
	year = {2019},
	publisher = {SPIE},
	organization = {SPIE},
	address = {San Francisco, United States},
	doi = {10.1117/12.251114510.1117/12.2511145.6013192560001},
	author = {Meneghini, Matteo and De Santi, Carlo and Barbato, Alessandro and Borga, Matteo and Canato, Eleonora and Chiocchetta, Francesca and Fabris, Elena and Masin, Fabrizio and Nardo, Arianna and Rampazzo, Fabiana and Ruzzarin, Maria and Tajalli, Alaleh and Barbato, Marco and Meneghesso, Gaudenzio and Zanoni, Enrico},
	editor = {Morko{\c c}, Hadis and Fujioka, Hiroshi and Schwarz, Ulrich T.}
}
@conference {114,
	title = {GaN-based lateral and vertical devices: physical mechanisms limiting stability and reliability},
	booktitle = {2019 Electron Devices Technology and Manufacturing Conference (EDTM)2019 Electron Devices Technology and Manufacturing Conference (EDTM)},
	year = {2019},
	publisher = {IEEE},
	organization = {IEEE},
	address = {Singapore, Singapore},
	doi = {10.1109/EDTM.2019.8731064},
	author = {Meneghesso, Gaudenzio and Meneghini, Matteo and De Santi, Carlo and Zanoni, Enrico}
}
@article {119,
	title = {The 2018 GaN power electronics roadmap},
	journal = {Journal of Physics D: Applied Physics},
	volume = {51},
	year = {2018},
	month = {Jan-04-2020},
	pages = {163001},
	issn = {0022-3727},
	doi = {10.1088/1361-6463/aaaf9d},
	author = {Amano, H and Baines, Y and Beam, E and Borga, Matteo and Bouchet, T and Chalker, Paul R and Charles, M and Chen, Kevin J and Chowdhury, Nadim and Chu, Rongming and De Santi, Carlo and De Souza, Maria Merlyne and Decoutere, Stefaan and Di Cioccio, L and Eckardt, Bernd and Egawa, Takashi and Fay, P and Freedsman, Joseph J and Guido, L and H{\"a}berlen, Oliver and Haynes, Geoff and Heckel, Thomas and Hemakumara, Dilini and Houston, Peter and Hu, Jie and Hua, Mengyuan and Huang, Qingyun and Huang, Alex and Jiang, Sheng and Kawai, H and Kinzer, Dan and Kuball, Martin and Kumar, Ashwani and Lee, Kean Boon and Li, Xu and Marcon, Denis and M{\"a}rz, Martin and McCarthy, R and Meneghesso, Gaudenzio and Meneghini, Matteo and Morvan, E and Nakajima, A and Narayanan, E M S and Oliver, Stephen and Palacios, Tom{\'a}s and Piedra, Daniel and Plissonnier, M and Reddy, R and Sun, Min and Thayne, Iain and Torres, A and Trivellin, Nicola and Unni, V and Uren, Michael J and Van Hove, Marleen and Wallis, David J and Wang, J and Xie, J and Yagi, S and Yang, Shu and Youtsey, C and Yu, Ruiyang and Zanoni, Enrico and Zeltner, Stefan and Zhang, Yuhao}
}
@article {86,
	title = {Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors},
	journal = {IEEE Transactions on Electron Devices},
	volume = {65},
	year = {2018},
	month = {Jan-12-2018},
	pages = {5365 - 5372},
	issn = {0018-9383},
	doi = {10.1109/TED.2018.2877262},
	url = {https://ieeexplore.ieee.org/document/8525132/http://xplorestaging.ieee.org/ielx7/16/8540961/08525132.pdf?arnumber=8525132},
	author = {Stockman, Arno and Masin, Fabrizio and Meneghini, Matteo and Zanoni, Enrico and Meneghesso, Gaudenzio and Bakeroot, Benoit and Moens, Peter}
}
@conference {59,
	title = {Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron},
	booktitle = {Solid-State Device Research Conference (ESSDERC), 2017 47th European},
	year = {2017},
	publisher = {IEEE},
	organization = {IEEE},
	abstract = {Temperature dependent substrate ramp measurements on AlGaN/GaN power high-electron-mobility transistors (HEMTs) are used to extract information on charge redistribution in the buffer structure as a function of substrate bias. The measurements are compared to a theoretical model, representing the ideal capacitive buffer stack. It is found that at room temperature some negative charge is stored in the buffer. However, at higher temperatures, positive charge storage occurs as a result of band-to-band tunneling through the GaN channel layer, suppressing bulk trap induced dynamic on-resistance.},
	doi = {10.1109/ESSDERC.2017.8066609},
	author = {Stockman, Arno and Uren, Michael and Tajalli, Alaleh and Meneghini, Matteo and Bakeroot, Benoit and Moens, Peter}
}
