@article {123,
	title = {Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment},
	journal = {Microelectronics Reliability},
	volume = {100-101},
	year = {2019},
	month = {Jan-09-2019},
	pages = {113461},
	issn = {00262714},
	doi = {10.1016/j.microrel.2019.113461},
	author = {Borga, M. and Meneghini, M. and Benazzi, D. and Canato, E. and P{\"u}sche, R. and Derluyn, J. and Abid, I. and Medjdoub, F. and Meneghesso, G. and Zanoni, E.}
}
@article {109,
	title = {ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping},
	journal = {Microelectronics Reliability},
	volume = {100-101},
	year = {2019},
	month = {Jan-09-2019},
	pages = {113334},
	issn = {00262714},
	doi = {10.1016/j.microrel.2019.06.026},
	author = {Canato, E. and Meneghini, M. and Nardo, A. and Masin, F. and Barbato, A. and Barbato, M. and Stockman, A. and Banerjee, A. and Moens, P. and Zanoni, E. and Meneghesso, G.}
}
@conference {89,
	title = {Micro-seconds-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate},
	booktitle = {2019 IEEE International Reliability Physics Symposium (IRPS)2019 IEEE International Reliability Physics Symposium (IRPS)},
	year = {2019},
	publisher = {IEEE},
	organization = {IEEE},
	address = {Monterey, CA, USA},
	doi = {10.1109/IRPS.2019.8720549},
	url = {https://ieeexplore.ieee.org/document/8720549/http://xplorestaging.ieee.org/ielx7/8712125/8720395/08720549.pdf?arnumber=8720549},
	author = {Canato, E. and Masin, F. and Borga, M. and Zanoni, E. and Meneghini, M. and Meneghesso, G. and Stockman, A. and Banerjee, A. and Moens, P.}
}
@article {127,
	title = {Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress},
	journal = {Applied Physics Letters},
	volume = {115},
	year = {2019},
	month = {May-07-2021},
	pages = {052103},
	issn = {0003-6951},
	doi = {10.1063/1.5109301},
	url = {http://aip.scitation.org/doi/10.1063/1.5109301},
	author = {Masin, F. and Meneghini, M. and Canato, E. and De Santi, C. and Stockman, A. and Zanoni, E. and Moens, P. and Meneghesso, G.}
}
@article {84,
	title = {Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors},
	journal = {Microelectronics Reliability},
	volume = {88-90},
	year = {2018},
	month = {Jan-09-2018},
	pages = {572 - 576},
	issn = {00262714},
	doi = {10.1016/j.microrel.2018.06.037},
	url = {https://linkinghub.elsevier.com/retrieve/pii/S0026271418304530https://api.elsevier.com/content/article/PII:S0026271418304530?httpAccept=text/xmlhttps://api.elsevier.com/content/article/PII:S0026271418304530?httpAccept=text/plain},
	author = {Tajalli, A. and Canato, E. and Nardo, A. and Meneghini, M. and Stockman, A. and Moens, P. and Zanoni, E. and Meneghesso, G.}
}
