@article {85,
	title = {The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors},
	journal = {IEEE Transactions on Electron Devices},
	volume = {66},
	year = {2019},
	month = {Jan-01-2019},
	pages = {372 - 377},
	issn = {0018-9383},
	doi = {10.1109/TED.2018.2881325},
	url = {https://ieeexplore.ieee.org/document/8556004/http://xplorestaging.ieee.org/ielx7/16/8585319/08556004.pdf?arnumber=8556004},
	author = {Stockman, A. and Tajalli, A. and Meneghini, M. and Uren, M. J. and Mouhoubi, S. and Gerardin, S. and Bagatin, M. and Paccagnella, A. and Meneghesso, G. and Zanoni, E. and Moens, P. and Bakeroot, B.}
}
@article {109,
	title = {ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping},
	journal = {Microelectronics Reliability},
	volume = {100-101},
	year = {2019},
	month = {Jan-09-2019},
	pages = {113334},
	issn = {00262714},
	doi = {10.1016/j.microrel.2019.06.026},
	author = {Canato, E. and Meneghini, M. and Nardo, A. and Masin, F. and Barbato, A. and Barbato, M. and Stockman, A. and Banerjee, A. and Moens, P. and Zanoni, E. and Meneghesso, G.}
}
@conference {89,
	title = {Micro-seconds-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate},
	booktitle = {2019 IEEE International Reliability Physics Symposium (IRPS)2019 IEEE International Reliability Physics Symposium (IRPS)},
	year = {2019},
	publisher = {IEEE},
	organization = {IEEE},
	address = {Monterey, CA, USA},
	doi = {10.1109/IRPS.2019.8720549},
	url = {https://ieeexplore.ieee.org/document/8720549/http://xplorestaging.ieee.org/ielx7/8712125/8720395/08720549.pdf?arnumber=8720549},
	author = {Canato, E. and Masin, F. and Borga, M. and Zanoni, E. and Meneghini, M. and Meneghesso, G. and Stockman, A. and Banerjee, A. and Moens, P.}
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@article {127,
	title = {Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress},
	journal = {Applied Physics Letters},
	volume = {115},
	year = {2019},
	month = {May-07-2021},
	pages = {052103},
	issn = {0003-6951},
	doi = {10.1063/1.5109301},
	url = {http://aip.scitation.org/doi/10.1063/1.5109301},
	author = {Masin, F. and Meneghini, M. and Canato, E. and De Santi, C. and Stockman, A. and Zanoni, E. and Moens, P. and Meneghesso, G.}
}
@conference {88,
	title = {Dynamic-ron control via proton irradiation in AlGaN/GaN transistors},
	booktitle = {2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)},
	year = {2018},
	publisher = {IEEE},
	organization = {IEEE},
	address = {Chicago, IL},
	doi = {10.1109/ISPSD.2018.8393610},
	url = {https://ieeexplore.ieee.org/document/8393610/http://xplorestaging.ieee.org/ielx7/8387225/8393579/08393610.pdf?arnumber=8393610},
	author = {Tajalli, A. and Stockman, A. and Meneghini, M. and Mouhoubi, S. and Banerjee, A. and Gerardin, S. and Bagatin, M. and Paccagnella, A. and Zanoni, E. and Tack, M. and Bakeroot, B. and Moens, P. and Meneghesso, G.}
}
@article {84,
	title = {Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors},
	journal = {Microelectronics Reliability},
	volume = {88-90},
	year = {2018},
	month = {Jan-09-2018},
	pages = {572 - 576},
	issn = {00262714},
	doi = {10.1016/j.microrel.2018.06.037},
	url = {https://linkinghub.elsevier.com/retrieve/pii/S0026271418304530https://api.elsevier.com/content/article/PII:S0026271418304530?httpAccept=text/xmlhttps://api.elsevier.com/content/article/PII:S0026271418304530?httpAccept=text/plain},
	author = {Tajalli, A. and Canato, E. and Nardo, A. and Meneghini, M. and Stockman, A. and Moens, P. and Zanoni, E. and Meneghesso, G.}
}
