@article {85,
	title = {The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors},
	journal = {IEEE Transactions on Electron Devices},
	volume = {66},
	year = {2019},
	month = {Jan-01-2019},
	pages = {372 - 377},
	issn = {0018-9383},
	doi = {10.1109/TED.2018.2881325},
	url = {https://ieeexplore.ieee.org/document/8556004/http://xplorestaging.ieee.org/ielx7/16/8585319/08556004.pdf?arnumber=8556004},
	author = {Stockman, A. and Tajalli, A. and Meneghini, M. and Uren, M. J. and Mouhoubi, S. and Gerardin, S. and Bagatin, M. and Paccagnella, A. and Meneghesso, G. and Zanoni, E. and Moens, P. and Bakeroot, B.}
}
