@article {85,
	title = {The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors},
	journal = {IEEE Transactions on Electron Devices},
	volume = {66},
	year = {2019},
	month = {Jan-01-2019},
	pages = {372 - 377},
	issn = {0018-9383},
	doi = {10.1109/TED.2018.2881325},
	url = {https://ieeexplore.ieee.org/document/8556004/http://xplorestaging.ieee.org/ielx7/16/8585319/08556004.pdf?arnumber=8556004},
	author = {Stockman, A. and Tajalli, A. and Meneghini, M. and Uren, M. J. and Mouhoubi, S. and Gerardin, S. and Bagatin, M. and Paccagnella, A. and Meneghesso, G. and Zanoni, E. and Moens, P. and Bakeroot, B.}
}
@conference {88,
	title = {Dynamic-ron control via proton irradiation in AlGaN/GaN transistors},
	booktitle = {2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)},
	year = {2018},
	publisher = {IEEE},
	organization = {IEEE},
	address = {Chicago, IL},
	doi = {10.1109/ISPSD.2018.8393610},
	url = {https://ieeexplore.ieee.org/document/8393610/http://xplorestaging.ieee.org/ielx7/8387225/8393579/08393610.pdf?arnumber=8393610},
	author = {Tajalli, A. and Stockman, A. and Meneghini, M. and Mouhoubi, S. and Banerjee, A. and Gerardin, S. and Bagatin, M. and Paccagnella, A. and Zanoni, E. and Tack, M. and Bakeroot, B. and Moens, P. and Meneghesso, G.}
}
