@article {111,
	title = {High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications},
	journal = {Materials},
	volume = {13},
	year = {2020},
	month = {Jan-10-2020},
	pages = {4271},
	doi = {10.3390/ma13194271},
	author = {Tajalli, Alaleh and Meneghini, Matteo and Besend{\"o}rfer, Sven and Kabouche, Riad and Abid, Idriss and P{\"u}sche, Roland and Derluyn, Joff and Degroote, Stefan and Germain, Marianne and Meissner, Elke and Zanoni, Enrico and Medjdoub, Farid and Meneghesso, Gaudenzio}
}
@article {116,
	title = {Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment},
	journal = {Micromachines},
	volume = {11},
	year = {2020},
	month = {Jan-01-2020},
	pages = {101},
	doi = {10.3390/mi11010101},
	author = {Tajalli, Alaleh and Borga, Matteo and Meneghini, Matteo and De Santi, Carlo and Benazzi, Davide and Besend{\"o}rfer, Sven and P{\"u}sche, Roland and Derluyn, Joff and Degroote, Stefan and Germain, Marianne and Kabouche, Riad and Abid, Idriss and Meissner, Elke and Zanoni, Enrico and Medjdoub, Farid and Meneghesso, Gaudenzio}
}
@conference {113,
	title = {Degradation physics of GaN-based lateral and vertical devices},
	booktitle = {Gallium Nitride Materials and Devices XIVGallium Nitride Materials and Devices XIV},
	year = {2019},
	publisher = {SPIE},
	organization = {SPIE},
	address = {San Francisco, United States},
	doi = {10.1117/12.251114510.1117/12.2511145.6013192560001},
	author = {Meneghini, Matteo and De Santi, Carlo and Barbato, Alessandro and Borga, Matteo and Canato, Eleonora and Chiocchetta, Francesca and Fabris, Elena and Masin, Fabrizio and Nardo, Arianna and Rampazzo, Fabiana and Ruzzarin, Maria and Tajalli, Alaleh and Barbato, Marco and Meneghesso, Gaudenzio and Zanoni, Enrico},
	editor = {Morko{\c c}, Hadis and Fujioka, Hiroshi and Schwarz, Ulrich T.}
}
@conference {114,
	title = {GaN-based lateral and vertical devices: physical mechanisms limiting stability and reliability},
	booktitle = {2019 Electron Devices Technology and Manufacturing Conference (EDTM)2019 Electron Devices Technology and Manufacturing Conference (EDTM)},
	year = {2019},
	publisher = {IEEE},
	organization = {IEEE},
	address = {Singapore, Singapore},
	doi = {10.1109/EDTM.2019.8731064},
	author = {Meneghesso, Gaudenzio and Meneghini, Matteo and De Santi, Carlo and Zanoni, Enrico}
}
@article {119,
	title = {The 2018 GaN power electronics roadmap},
	journal = {Journal of Physics D: Applied Physics},
	volume = {51},
	year = {2018},
	month = {Jan-04-2020},
	pages = {163001},
	issn = {0022-3727},
	doi = {10.1088/1361-6463/aaaf9d},
	author = {Amano, H and Baines, Y and Beam, E and Borga, Matteo and Bouchet, T and Chalker, Paul R and Charles, M and Chen, Kevin J and Chowdhury, Nadim and Chu, Rongming and De Santi, Carlo and De Souza, Maria Merlyne and Decoutere, Stefaan and Di Cioccio, L and Eckardt, Bernd and Egawa, Takashi and Fay, P and Freedsman, Joseph J and Guido, L and H{\"a}berlen, Oliver and Haynes, Geoff and Heckel, Thomas and Hemakumara, Dilini and Houston, Peter and Hu, Jie and Hua, Mengyuan and Huang, Qingyun and Huang, Alex and Jiang, Sheng and Kawai, H and Kinzer, Dan and Kuball, Martin and Kumar, Ashwani and Lee, Kean Boon and Li, Xu and Marcon, Denis and M{\"a}rz, Martin and McCarthy, R and Meneghesso, Gaudenzio and Meneghini, Matteo and Morvan, E and Nakajima, A and Narayanan, E M S and Oliver, Stephen and Palacios, Tom{\'a}s and Piedra, Daniel and Plissonnier, M and Reddy, R and Sun, Min and Thayne, Iain and Torres, A and Trivellin, Nicola and Unni, V and Uren, Michael J and Van Hove, Marleen and Wallis, David J and Wang, J and Xie, J and Yagi, S and Yang, Shu and Youtsey, C and Yu, Ruiyang and Zanoni, Enrico and Zeltner, Stefan and Zhang, Yuhao}
}
@article {86,
	title = {Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors},
	journal = {IEEE Transactions on Electron Devices},
	volume = {65},
	year = {2018},
	month = {Jan-12-2018},
	pages = {5365 - 5372},
	issn = {0018-9383},
	doi = {10.1109/TED.2018.2877262},
	url = {https://ieeexplore.ieee.org/document/8525132/http://xplorestaging.ieee.org/ielx7/16/8540961/08525132.pdf?arnumber=8525132},
	author = {Stockman, Arno and Masin, Fabrizio and Meneghini, Matteo and Zanoni, Enrico and Meneghesso, Gaudenzio and Bakeroot, Benoit and Moens, Peter}
}
@article {48,
	title = {Evidence of Hot-Electron Effects during Hard Switching of AlGaN/GaN HEMTs},
	journal = {IEEE Transactions on Electron Devices},
	volume = {PP},
	year = {2017},
	month = {08/2017},
	pages = {1-6},
	abstract = {This paper reports on the impact of soft- and hard-switching conditions on the dynamic ON-resistance of AlGaN/GaN high-electron mobility transistors. For this study, we used a special double pulse setup, which controls the overlapping of the drain and gate waveforms (thus inducing soft and hard switching), while measuring the corresponding impact on the ON-resistance, drain current, and electroluminescence (EL). The results demonstrate that the analyzed devices do not suffer from dynamic RON increase when they are submitted to soft switching up to VDS= 600 V. On the contrary, hard-switching conditions lead to a measurable increase in the dynamic ON-resistance (dynamic-RON). The increase in dynamic RON induced by hard switching is ascribed to hot-electrons effects: during each switching event, the electrons in the channel are accelerated by the high electric field and subsequently trapped in the AlGaN/GaN heterostructure or at the surface. This hypothesis is supported by the following results: 1) the increase in RON is correlated with the EL signal measured under hard-switching conditions and 2) the impact of hard switching on dynamic RON becomes weaker at high-temperature levels, as the average energy of hot electrons decreases due to the increase scattering with the lattice.},
	doi = {10.1109/TED.2017.2728785},
	url = {https://www.researchgate.net/publication/318872297_Evidence_of_Hot-Electron_Effects_during_Hard_Switching_of_AlGaNGaN_HEMTs},
	author = {Rossetto, I and Meneghini, M and Tajalli, A and Dalcanale, S and Santi, Carlo and Moens, Peter and Banerjee, Abhishek and Zanoni, Enrico and Meneghesso, Gaudenzio}
}
