Scientific Papers

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2020
Melkonyan A, Schulz M.  2020.  Advanced Gate Drive Unit for junction temperature monitoring and dynamic current balancing of GaN transistors operating in parallel. 2020 IEEE Applied Power Electronics Conference and Exposition (APEC)2020 IEEE Applied Power Electronics Conference and Exposition (APEC).
Shintaku F, Yosho D, Kangawa Y, Iwata J-I, Oshiyama A, Shiraishi K, Tanaka A, Amano H.  2020.  Computational study of oxygen stability in vicinal m(10−10)-GaN growth by MOVPE. Applied Physics Express. 13(5):055507.
Geenen F., Constant A., Solano E., Deduytsche D., Mocuta C., Coppens P., Detavernier C..  2020.  Formation and preferential orientation of Au-free Al/Ti-based ohmic contacts on different hexagonal nitride-based heterostructures. Journal of Applied Physics. 127(21):215701.
Rittner M, Kessler U, Konjedic T, Naundorf J, Kriegel K, Schulz M, Meneghesso G.  2020.  Half-bridge Concepts for High Blocking Voltage GaN HEMTs (EU Public Funded Project ‘InRel-NPower ‘. CIPS 2020; 11th International Conference on Integrated Power Electronics Systems.
Tajalli A, Meneghini M, Besendörfer S, Kabouche R, Abid I, Püsche R, Derluyn J, Degroote S, Germain M, Meissner E et al..  2020.  High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications. Materials. 13(19):4271.
Besendörfer S, Meissner E, Medjdoub F, Derluyn J, Friedrich J, Erlbacher T.  2020.  The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors. Scientific Reports. 10(1)
Besendörfer S., Meissner E., Zweipfennig T., Yacoub H., Fahle D., Behmenburg H., Kalisch H., Vescan A., Friedrich J., Erlbacher T..  2020.  Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures. AIP Advances. 10(4):045028.
Kabouche R, Abid I, Püsche R, Derluyn J, Degroote S, Germain M, Tajalli A, Meneghini M, Meneghesso G, Medjdoub F.  2020.  Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures. physica status solidi (a). 217(7):1900687.
Yosho D, Inatomi Y, Kangawa Y.  2020.  Modeling carbon coverage on polar GaN surfaces during MOVPE. Japanese Journal of Applied Physics. 59(4):048002.
Yosho D, Shintaku F, Inatomi Y, Kangawa Y, Iwata J-I, Oshiyama A, Shiraishi K, Tanaka A, Amano H.  2020.  Oxygen Incorporation Kinetics in Vicinal m (10−10) Gallium Nitride Growth by Metal‐Organic Vapor Phase Epitaxy. physica status solidi (RRL) – Rapid Research Letters. 14(6):2000142.
Abid I., Kabouche R., Medjdoub F., Besendörfer S., Meissner E., Derluyn J., Degroote S., Germain M., Miyake H..  2020.  Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure. 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Inatomi Y., Kangawa Y..  2020.  Theoretical study of adatom stability on polar GaN surfaces during MBE and MOVPE. Applied Surface Science. 502:144205.
Freitas JJr A, Besendorfer S, Meissner E, Tajalli A, Meneghini M, Derluyn J, Medjdoub F, Meneghesso G, Friedrich J, Erlbacher T.  2020.  Vertical Breakdown of GaN on Si Due to V-Pits.
Besendörfer S., Meissner E., Tajalli A., Meneghini M., Freitas J.A, Derluyn J., Medjdoub F., Meneghesso G., Friedrich J., Erlbacher T..  2020.  Vertical breakdown of GaN on Si due to V-pits. Journal of Applied Physics. 127(1):015701.
Tajalli A, Borga M, Meneghini M, De Santi C, Benazzi D, Besendörfer S, Püsche R, Derluyn J, Degroote S, Germain M et al..  2020.  Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment. Micromachines. 11(1):101.
2019
Borga M., Meneghini M., Benazzi D., Canato E., Püsche R., Derluyn J., Abid I., Medjdoub F., Meneghesso G., Zanoni E..  2019.  Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment. Microelectronics Reliability. 100-101:113461.
Kusaba A, Li G, Kempisty P, von Spakovsky M, Kangawa Y.  2019.  CH4 Adsorption Probability on GaN(0001) and (000−1) during Metalorganic Vapor Phase Epitaxy and Its Relationship to Carbon Contamination in the Films. Materials. 12(6):972.
Meneghini M, De Santi C, Barbato A, Borga M, Canato E, Chiocchetta F, Fabris E, Masin F, Nardo A, Rampazzo F et al..  2019.  Degradation physics of GaN-based lateral and vertical devices. Gallium Nitride Materials and Devices XIVGallium Nitride Materials and Devices XIV.
Kabouche R, Abid I, Zegaoui M., Cheng K, Medjdoub F..  2019.  Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects. International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019.
Stockman A., Tajalli A., Meneghini M., Uren M.J, Mouhoubi S., Gerardin S., Bagatin M., Paccagnella A., Meneghesso G., Zanoni E. et al..  2019.  The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors. IEEE Transactions on Electron Devices. 66(1):372-377.
Pavlidis G, Kim SH, Abid I, Zegaoui M, Medjdoub F, Graham S.  2019.  The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs. IEEE Electron Device Letters. 40(7):1060-1063.
Canato E., Meneghini M., Nardo A., Masin F., Barbato A., Barbato M., Stockman A., Banerjee A., Moens P., Zanoni E. et al..  2019.  ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping. Microelectronics Reliability. 100-101:113334.
Meneghesso G, Meneghini M, De Santi C, Zanoni E.  2019.  GaN-based lateral and vertical devices: physical mechanisms limiting stability and reliability. 2019 Electron Devices Technology and Manufacturing Conference (EDTM)2019 Electron Devices Technology and Manufacturing Conference (EDTM).
Borga M., Meneghini M., Benazzi D, Püsche R, Derluyn J, Abid I, Medjdoub F., Meneghesso G., Zanoni E..  2019.  GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current. 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019.
Shojiki K, Hayashi Y, Uesugi K, Miyake H.  2019.  Local and anisotropic strain in AlN film on sapphire observed by Raman scattering spectroscopy. Japanese Journal of Applied Physics. 58(SC):SCCB17.

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