Scientific Papers

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2019
Borga M., Meneghini M., Benazzi D., Canato E., Püsche R., Derluyn J., Abid I., Medjdoub F., Meneghesso G., Zanoni E..  2019.  Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment. Microelectronics Reliability. 100-101:113461.
Stockman A., Tajalli A., Meneghini M., Uren M.J, Mouhoubi S., Gerardin S., Bagatin M., Paccagnella A., Meneghesso G., Zanoni E. et al..  2019.  The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors. IEEE Transactions on Electron Devices. 66(1):372-377.
Canato E., Meneghini M., Nardo A., Masin F., Barbato A., Barbato M., Stockman A., Banerjee A., Moens P., Zanoni E. et al..  2019.  ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping. Microelectronics Reliability. 100-101:113334.
Borga M., Meneghini M., Benazzi D, Püsche R, Derluyn J, Abid I, Medjdoub F., Meneghesso G., Zanoni E..  2019.  GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current. 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019.
Canato E., Masin F., Borga M., Zanoni E., Meneghini M., Meneghesso G., Stockman A., Banerjee A., Moens P..  2019.  Micro-seconds-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate. 2019 IEEE International Reliability Physics Symposium (IRPS)2019 IEEE International Reliability Physics Symposium (IRPS).
Masin F., Meneghini M., Canato E., De Santi C., Stockman A., Zanoni E., Moens P., Meneghesso G..  2019.  Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress. Applied Physics Letters. 115(5):052103.
2018
Tajalli A., Stockman A., Meneghini M., Mouhoubi S., Banerjee A., Gerardin S., Bagatin M., Paccagnella A., Zanoni E., Tack M. et al..  2018.  Dynamic-ron control via proton irradiation in AlGaN/GaN transistors. 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Tajalli A., Canato E., Nardo A., Meneghini M., Stockman A., Moens P., Zanoni E., Meneghesso G..  2018.  Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors. Microelectronics Reliability. 88-90:572-576.