We've updated publication list on our website, and reached a milestone! Feel curious to dive into more than 50 publications investigating Gallium Nitride power devices!
Scientific Papers
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2020. High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications. Materials. 13(19):4271.
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2020. The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors. Scientific Reports. 10(1)
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2020. Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures. physica status solidi (a). 217(7):1900687.
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2020. Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment. Micromachines. 11(1):101.
