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Ralf Lerner, Integration of GaN HEMTs on Silicon CMOS
Integration of GaN high voltage transistors into Silicon CMOS could combine superior electrical parameters of GaN HEMTs and the huge logic functionality of Silicon CMOS. Several approaches for such integration will be discussed
- Monolithic integration on CMOS
- Monolithic integration on GaN
- Heterogeneous integration by micro-transfer-printing
- Integration by direct wafer bonding
An industrial based comparison of these approaches contains technical but also commercial and reliability related aspects.
Ralf Lerner received his diploma in material science from the University Erlangen-Nuernberg, in 1993. After working 3 years at the university of Erlangen-Nuernberg in the field of (compound semiconductor) crystal growth he joined X-FAB Semiconductor Foundries AG in 1996. Ralf Lerner received his diploma in material science from the University Erlangen-Nuernberg, in 1993. After working 3 years at the university of Erlangen-Nuernberg in the field of (compound semiconductor) crystal growth he joined X-FAB Semiconductor Foundries AG in 1996
