Joff Derluyn, Hetero-epitaxy of GaN on Si for electronic applications

This short lecture will provide an introduction to the hetero-epitaxial growth by MOCVD of GaN on Si substrates for electronic applications. The following topics will be covered:

  1. Typical layer stacks for lateral GaN power transistors,
  2. Nucleation and strain management techniques,
  3. Electron confinement and voltage boosting layers,
  4. Different HEMT hetero-structures.

Dr. Joff Derluyn is a co-founder and CTO of EpiGaN, Hasselt (Belgium). He has received a PhD in Electrical Engineering from Gent University, Belgium, in 2003 on the topic of MOCVD growth of dilute nitrides, after which he spent almost ten years at IMEC researching GaN process technology for power switching and RF. In 2010 he co-founded EpiGaN, a company which specializes in the production of GaN epitaxial wafers for electronics applications.