Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects

TitleDemonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects
Publication TypeConference Paper
Year of Publication2019
AuthorsKabouche R, Abid I, Zegaoui M., Cheng K, Medjdoub F.
Conference NameInternational Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019
Conference LocationMinneapolis, United States
KeywordsGaN power devices, high voltage, trapping
URLhttps://hal.archives-ouvertes.fr/hal-02356891