News & Press

Our second newsletter has been send to over 100 interested subscribers. Also curious in its content?

The wish for easy realization of a GaN-HEMT device leads typically to normally-on devices.

Our project is featured in a recent article of the impact journal. Click here to read more about it!

The InRel-NPower project is featured in the August edition of Bodo's Power Magazine!

Partner IEMN demonstrates that one GaN power transistor can potentially block over 3000V. Click here to learn more.

After 12 months within the InRel-NPower project, we've updated our promotional poster and brochure. Be the first to see them at the GaN Marathon 2.0, April 18-19th 2018!

How InRel-NPower envisions to reduce the world's energy waste! See our movie to find out how!

You may have had the chance to meet us at our summer school in Brixen (Italy), together with over 60 other participants.

Our first newsletter has been send to all our subscribers! Also curious in its content? Subscribe on our website! You can find our first newsletter here.


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