Total suppression of dynamic-ron in AlGaN/GaN-HEMTs through proton irradiation

TitleTotal suppression of dynamic-ron in AlGaN/GaN-HEMTs through proton irradiation
Publication TypeConference Paper
Year of Publication2017
AuthorsMeneghini M., Tajalli A., Moens P., Banerjee A., Stockman A., Tack M., Gerardin S., Bagatin M., Paccagnella A., Zanoni E., Meneghesso G.
Conference Name2017 IEEE International Electron Devices Meeting (IEDM)
Date PublishedDec
KeywordsAlGaN-GaN, aluminium compounds, Current measurement, dynamic-Ron, electron traps, electron volt energy 3.0 MeV, gallium compounds, Gallium nitride, hard switching analysis, HEMT, HEMTs, high electron mobility transistors, III-V semiconductors, MODFETs, power HEMT, proton effects, proton irradiation, Protons, pulsed characterization, Radiation effects, radiation hardening (electronics), radiation testing, semiconductor device testing, subthreshold leakage, Switches, temperature 150.0 degC, threshold voltage, transient measurements, trap-related transients, voltage 600.0 V, wide band gap semiconductors

For the first time, we demonstrate that proton irradiation can be an effective tool for achieving zero dynamic-Ron in GaN-based power HEMTs. Based on combined pulsed characterization, transient measurements and hard switching analysis on untreated and irradiated devices we demonstrate the following relevant results: (i) the devices under analysis show an outstanding robustness against 3 MeV proton irradiation, up to a fluence of 1.5×1014cm-2. (ii) For fluences higher than 1013cm-2, the devices show a substantial reduction of dynamic-Ron. At the highest analyzed fluence (1.5×1014cm-2), dynamic-Ron is completely suppressed at 600 V/150 °C, without measurable changes in the gate and sub-threshold leakage and in the threshold voltage. (iii) transient and hard switching analysis indicate the total suppression of the trap-related transients identified before radiation testing. The results are explained by considering that proton irradiation increases the leakage through the uid-GaN channel layer. This increases the detrapping rate, and leads to the suppression of dynamic-Ron at high VDS.