Gleb Lukin, 'Growth of GaN bulk crystals for electronic applications'

This short lecture will provide an introduction to the growth methods of GaN bulk crystals for the fabrication of GaN substrates for electronic applications. The following topics will be covered:

  1.  Why we would need native nitride substrates,
  2.  Growth techniques for GaN bulk crystals,
  3.  Properties of the crystals and substrates fabricated by Ammonothermal and HVPE methods,
  4.  Examples of homoepitactically grown electronic devices.

Dr. Gleb Lukin, is a scientist at the Department Materials of the Fraunhofer Institute of Integrated Systems and Device Technology (IISB) in Erlangen, Germany and member of the Nitrides group. He received his PhD from the University of Freiberg, Germany in 2018. He has more than 10 years of experience in epitaxial growth of semiconductor materials and development of growth techniques for the vapor phase deposition. He is authored or co-authored several scientific publications and contributions to conferences.