Peter Moens, GaN-based high-electron mobility power devices: technology and development

This tutorial will provide an overview and in-depth discussion of the most important device concepts for power devices. Older concepts are based on clever junction engineering, whereas new concepts are based on material engineering. The trend from Si over III-nitride device to III-oxide devices will be given, and examples will be provided.

Peter Moens is currently a senior scientist in the corporate R&D department. He received the Ph.D in solid state physics, at the Laboratory of Solid State Physics of the University of Gent, Belgium in 1993. Throughout his career at ON Semiconductor he has been involved in process engineering, TCAD engineering, he has been responsible for the Advanced Development group within corporate R&D where his focus was mainly on the development of novel device concepts for smart power technologies, and he has been leading the high voltage discrete device development at ON Semiconductor.

Peter Moens is currently a senior scientist in the corporate R&D department. He received the Ph.D in solid state physics, at the Laboratory of Solid State Physics of the University of Gent, Belgium in 1993. Throughout his career at ON Semiconductor he has been involved in process engineering, TCAD engineering, he has been responsible for the Advanced Development group within corporate R&D where his focus was mainly on the development of novel device concepts for smart power technologies, and he has been leading the high voltage discrete device development at ON Semiconductor.