Gaudensio Meneghesso, Reliability of GaN-based power devices

Prof. Meneghesso received the Ph.D. degree in Electrical and Telecommunication Engineering from the University of Padova in 1997. He received the Italian Telecom award for his thesis work in 1993. In 2011 he became Full Professor at the University of Padova. His research interests involves mainly the Electrical characterization, modeling and reliability of several semiconductor devices. He is an internationally-acclaimed expert in the field of GaN, and co-organised the GaN marathon, the biggest GaN-focused conference in 2018 in Europe.

Prof. Meneghesso published more than 600 technical papers and he has been invited to present his research activities in more than 80 International conferences. He is also co-author of eight papers which got the best paper award. He is reviewer of several international journals: IEEE Transactions on Electron Devices, IEEE Electron Device Letters, IEE Electronics Letters, Journal of Applied Physics, Applied Physics Letters and Semiconductor Science and Technology (IOP), Microelectronics Reliability (Elsevier). He has been a Guest Editor for the IEEE TED Special Issue on Light-Emitting Diodes (January 2010), and for the Microelectronics Reliability Special Issues, vol. 52, 2012 (papers presented at the 23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2012). He has been serving since 2005 for the IEEE International Reliability Physics (IRPS) Symposium, being TPC Chair of the Compound Semiconductor from 2008 to 2010, and since 2009 he has been member of the management committee. He served several years for the IEEE-International Electron Device Meeting (IEDM): he was in the Quantum Electronics and Compound Semiconductors sub-committee as a member in 2003, as chair in 2004 and 2005 while in 2006 and 2007 he was in the Executive Committee as European Arrangements Chair. He is in the steering committee of several European conferences: European Solid State Device Conference (ESSDERC), Heterostructures Technology Workshop (HETECH), Workshop on Compound Semiconductors Devices and Integrated Circuits held in Europe (WOCSDICE). Finally, He has also been involved in the Technical Program Committee of several international conferences. He was the General Chair of HETECH 2001, WOCSDICE 2007, HETECH 2009, ESREF 2012, WOCSEMMAD 2013, TWHM 2013. He has been elevated to IEEE Fellow class 2013, with the following citation: “for contributions to the reliability physics of compound semiconductors devices”.