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Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors
Title | Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors |
Publication Type | Journal Article |
Year of Publication | 2018 |
Authors | Stockman A, Masin F, Meneghini M, Zanoni E, Meneghesso G, Bakeroot B, Moens P |
Journal | IEEE Transactions on Electron Devices |
Volume | 65 |
Issue | 12 |
Pagination | 5365 - 5372 |
Date Published | Jan-12-2018 |
ISSN | 0018-9383 |
URL | https://ieeexplore.ieee.org/document/8525132/http://xplorestaging.ieee.org/ielx7/16/8540961/08525132.pdf?arnumber=8525132 |
DOI | 10.1109/TED.2018.2877262 |
Short Title | IEEE Trans. Electron Devices |