Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors

TitleGate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors
Publication TypeJournal Article
Year of Publication2018
AuthorsStockman A, Masin F, Meneghini M, Zanoni E, Meneghesso G, Bakeroot B, Moens P
JournalIEEE Transactions on Electron Devices
Volume65
Issue12
Pagination5365 - 5372
Date PublishedJan-12-2018
ISSN0018-9383
URLhttps://ieeexplore.ieee.org/document/8525132/http://xplorestaging.ieee.org/ielx7/16/8540961/08525132.pdf?arnumber=8525132
DOI10.1109/TED.2018.2877262
Short TitleIEEE Trans. Electron Devices