We've updated publication list on our website, and reached a milestone! Feel curious to dive into more than 50 publications investigating Gallium Nitride power devices!
Scientific Papers
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Vertical breakdown of GaN on Si due to V-pits. Journal of Applied Physics. 127(1):015701.
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2020. The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors. IEEE Transactions on Electron Devices. 66(1):372-377.
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2019. Dynamic-ron control via proton irradiation in AlGaN/GaN transistors. 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
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2018. Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors. Microelectronics Reliability. 88-90:572-576.
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2018. Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices. 64(9):3734-3739.
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2017.