We've updated publication list on our website, and reached a milestone! Feel curious to dive into more than 50 publications investigating Gallium Nitride power devices!
Scientific Papers
Export 4 results:
Filters: Author is Hayashi, Yusuke [Clear All Filters]
Local and anisotropic strain in AlN film on sapphire observed by Raman scattering spectroscopy. Japanese Journal of Applied Physics. 58(SC):SCCB17.
.
2019. Quantitative evaluation of strain relaxation in annealed sputter-deposited AlN film. Journal of Crystal Growth. 512:16-19.
.
2019. Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures. Applied Physics Express. 12(6):065501.
.
2019. Polarity inversion of aluminum nitride by direct wafer bonding. Applied Physics Express. 11(3):031003.
.
2018.