Summer school on wide-bandgap nitride devices

 Nitride semiconductor technology - from substrate to application
(Summerschool was organised July 8-11, 2019)

Semiconductor power devices are a central part of any power conversion circuit and are ubiquitous in our daily lives: they transform voltages for a multitude of appliances, such as from the 220V AC mains to a 12V DC end-user appliance. Efficient power conversion systems are at the heart of the worldwide effort for a green economy, since they can minimize losses and save energy.

Systems employing wide bandgap semiconductors such as GaN-based devices allow for the implementation of electronics operating at high-switching speed, higher voltages, higher temperatures while maintaining high efficiencies. To unlock the full potential of GaN-based devises, we need to study and understand all the different aspects of the formed devices, from growing the raw material to packaging and a demonstration of its potential in a final device. In this course, we focus on two applications: high voltage power applications and densely integrated materials for CMOS drivers. The attendees will learn on the different aspects in creating such wide-bandgap devices:

  1. the challenges for growing wide bandgap materials and how semiconductor defects influence the final material.
  2. how the semiconductor material is being implemented in a final device, and how the processing can significantly improve the characteristics of the devices.
  3. how the fabricated devices can still fail, how to investigate these failures and how to categorise the degradation mechanisms.
  4. how a device is implemented in an consumer product, and the impact of specific ambient loads such as temperature on device performance.

This summer school is co-organised by the H2020 programmes InRel-NPower and GaNonCMOS.



Click on the dates below to view our intended program of our summer school.
The program will be updated in due time with more presentation information.

  Monday, July 8, 2019

09:00    Introduction to the summer school

09:05     Keynote by O. Ambacher, University of Freiburg
              GaN-based power electronics: current performance and future potential
              read more about this talk here

10:45     Coffee break

11:00     J. Derluyn, EpiGaN,  and G. Lukin, Fraunhofer IISB
              Hetero-epitaxy of GaN on Si for electronic applications (J. Derluyn)
              read more about this talk here
              Growth of GaN bulk crystals for electronic applications (G. Lukin)
              read more about this talk here

13:00     Lunch break

14:30    P. Moens, ONSemiconductor
            Semiconductor Power Devices: from junction to material engineering.
             read more about this talk here

16:30     Coffee break
               Poster presentations by participants

18:00     Closing of 1st day of summer school

  Tuesday, July 9, 2019

09:00    G. Meneghesso, University of Padua
             Reliability of GaN-based power devices
             read more about this talk here

11:00     Coffee break

11:15     M. Rittner, Robert Bosch
             Aspects on Assembly and Interconnection Technologies of WBG Power Modules

             read more about this talk here

12:45     Lunch break

14:00    K. Kriegel, Siemens
             Industrial applications of wide-bandgap power electronics
            read more about this talk here

15:30     Coffee break

16:00     Short oral presentations by participants.

18:00     Closing of 2nd day of summer school

  Wednessday, July 10, 2019

09:00    Keynote by S. O'Driscoll, Tyndall National Institute
             read more about this talk here

10:30     Coffee break

11:00     N. Akil, PNO Innovation
             Overview on the available EU funding programmes for R&D&I
             read more about this talk here

12:30     Lunch break

14:00    Company visit to
             ONSemiconductor, Oudenaarde

  Thursday, July 11, 2019

09:00     G. Weis, AT&S
             Embedded inductors for power converter applications
             read more about this talk here

10:30     Coffee break

11:00     R. Lerner, X-FAB
            Integration of GaN HEMTs on Silicon CMOS

            read more about this talk here

12:30     Lunch break

14:00    S. Suchovsky, RECOM
             Testing of Power Converters for Industrial Use
             read  more about this talk here

15:30    Closing of the summer school


Participation is free of charge, but only a limited number of participants can attend. Interested participants are advised to register in your earliest convenience.

Registration is possible through our registration page. Please register before June 23 2019.



The workshop will be organised at:
Het Pand, Ghent University
Onderbergen 1
9000 Ghent, Belgium

Recommended student accomodation (without obligations)

Studens can book their overnight stay at the youth hostel 'De Draeke', located at a 10min walk from Het Pand for € 27 / night (< 30 years old).
Hostel De Draecke
Sint-Widostraat 11
9000 Gent or


Our flyer can be downloaded here.


Department of Solid State Sciences, Ghent University
Krijgslaan 281 - Building S12
9000 Gent, Belgium

Phone: +32 (0)9 264 43 54

Contact by e-mail


The InRel-NPower project has received funding from the European Union’s Horizon 2020 Research and Innovation program under Grant Agreement No 720527.
The GaNonCMOS project has received funding from the European Union's Horizon 2020 Research and Innovation program under Grant Agreement No 721107.

This summer school has been made possible through the support of Ghent University's Doctoral Schools programme and Flanders State of the Art.

Flanders State of the Art