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Scientific Papers
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Local and anisotropic strain in AlN film on sapphire observed by Raman scattering spectroscopy. Japanese Journal of Applied Physics. 58(SC):SCCB17.
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2019. Preparation of high-quality thick AlN layer on nanopatterned sapphire substrates with sputter-deposited annealed AlN film by hydride vapor-phase epitaxy. Japanese Journal of Applied Physics. 58(SC):SC1003.
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2019. Quantitative evaluation of strain relaxation in annealed sputter-deposited AlN film. Journal of Crystal Growth. 512:16-19.
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2019. Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures. Applied Physics Express. 12(6):065501.
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2019. Structural analysis of polarity inversion boundary in sputtered AlN films annealed under high temperatures. Japanese Journal of Applied Physics. 58(SC):SCCB30.
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2019. Effect of thermal annealing on AlN films grown on sputtered AlN templates by metalorganic vapor phase epitaxy. Japanese Journal of Applied Physics. 57(1S):01AD05.
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2018. Improvement mechanism of sputtered AlN films by high-temperature annealing. Journal of Crystal Growth. 502:41-44.
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2018. Polarity inversion of aluminum nitride by direct wafer bonding. Applied Physics Express. 11(3):031003.
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2018.